Kituri amplificare audio Clasa D similare Purifi cu Mosfet SiC (carbura de siliciu) superiori eGan si Mosfet obisnuiti, cu performante foarte inalte. Frecventa de oscilatie 450-600kHz,DC offset 2-20mV max,distorsiuni armonice 0.0007% la 80% putere sinus,frecventa de raspuns 15Hz - 35kHz,putere la o alimentare de maxim +/-60V 400W in 4 ohm si 200W in 8 ohm cu o disipatie termica extrem de mica!

Pret 800 lei perechea.

Cateva detalii despre SiC -uri

SiC™ MOSFET offers a series of advantages. These include the lowest gate charge and device capacitance levels seen in SiC switches, no reverse recovery losses of the anti-parallel diode, temperature-independent low switching losses, and threshold-free on-state characteristics.

Infineon’s unique CoolSiC™ MOSFET adds additional advantages. Superior gate oxide reliability enabled by state-of-the-art trench design, best in class switching and conduction losses, highest transconductance level (gain), a threshold voltage of Vth = 4V and short-circuit robustness. This is the revolution you can rely on.

All this results in a robust Silicon Carbide MOSFET technology, ideal for hard- and resonant-switching topologies like LLC and ZVS, which can be driven like an IGBT or MOSFET with easy-to-use drivers. Delivering the highest-level efficiency at high switching frequencies allowing for system size reduction, power density increases, and high lifetime reliability.

Benefits

Highest efficiency for reduced cooling effort
Longer lifetime and higher reliability
Higher frequency operation
Increased power density